ON EARLY STAGE DEGRADATION IN ZN DIFFUSED GAAS LEDCOGNETTI C; CONTI M; CHIARETTI G et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1093-1097; BIBL. 22 REF.Article

OBSERVATION D'UN EFFET PHOTOGALVANIQUE "LINEAIRE" DANS L'ANTIMONIURE D'INDIUMANDRIANOV AV; YAROSHETSKIJ ID.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 706-708; BIBL. 7 REF.Article

INFLUENCE D'UN ECLAIREMENT AUXILIAIRE EXTRINSEQUE SUR LA LUMINESCENCE DE GAP DOPE PAR ZN, ONECHAEV VM; POLTORATSKIJ EH A; SURIS RA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 129-132; BIBL. 8 REF.Article

ATTENUATION DE LA LUMIERE PAR LES PRECIPITES D'IMPURETE DANS GAP <ZN>ABAGYAN SA; KRUPYSHEV RS; KUZNETSOV YU N et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 837-840; BIBL. 7 REF.Article

SPECTRES D'ABSORPTION DE MONOCRISTAUX NATURELS DE ZNSTODOROV S; SEMERDZHIEV KH; MLADZHOV L et al.1970; GOD. VISSH. TEKH. UCHEBN. ZAVED., FIZ.; BALG.; DA. 1970; VOL. 7; NO 2; PP. 43-50; ABS. RUSSE FR.; BIBL. 17 REF.Serial Issue

IMPURITY PROFILE ON GAP DIODES IN THE NEIGHBOURHOOD OF A P-N JUNCTIONOELGART G; ARNOLD G.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 609-618; ABS. GER; BIBL. 19 REF.Article

ZINC DIFFUSION INTO GAP FROM DOPED OXIDE FILMS.FREMUNT R.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 37; NO 1; PP. 37-41; BIBL. 13 REF.Article

PHOTOCONDUCTIVITE DU NITRURE DE GALLIUMSIDOROV VG; SHAGALOV MD; SHALABUTOV YU K et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 168-171; BIBL. 14 REF.Article

PROPERTIES OF ZN-DOPED VPE-GROWN GAN. I: LUMINESCENCE DATA IN RELATION TO DOPING CONDITIONSMONEMAR B; LAGERSTEDT O; GISLASON HP et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 625-639; BIBL. 51 REF.Article

RAMAN STUDIES OF THE ZN ACCEPTOR IN GAP.CHASE LL; HAYES W; RYAN JF et al.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 15; PP. 2957-2966; BIBL. 27 REF.Article

REACTION KINETICS IN GAP:(ZN,O)FEENSTRA RM; MCGILL TC.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 10; PP. 6329-6337; BIBL. 24 REF.Article

ANNEALING BEHAVIOR OF ZN-DOPED P-TYPE INSESHIGETOMI S; IKARI T; KOGA Y et al.SHIGETOMI S; 1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 254-256; BIBL. 9 REF.Article

SPECTRE D'ENERGIE DE CERTAINES IMPURETES DANS LES SOLUTIONS SOLIDES DU SYSTEME GE-SIBAJDAKOVA AP; BELOKUROVA IN; DEGTYAREV VF et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 11; PP. 1951-1953; BIBL. 8 REF.Article

THE EFFECT OF GAMMA IRRADIATION AND FORWARD BIAS ON THE 76 K ELECTROLUMINESCENCE SPECTRUM OF GAP:ZN, OBARNES CE.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 3; PP. 377-389; BIBL. 28 REF.Article

SOLUBILITE ET INTERACTION DONNEUR-ACCEPTEUR DANS INAS DOPE PAR S, SE ET ZNGLAZOV VM; KISELEV AI; SHVEOKOV EI et al.1979; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1979; VOL. 15; NO 3; PP. 390-394; BIBL. 10 REF.Article

CONDUCTIVITE PAR SAUTS SUR LES NIVEAUX DONNEURS PROFONDS DU CHROME DANS INSBKOSAREV VV; PARFEN'EV RV; POPOV VV et al.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 2; PP. 489-493; BIBL. 9 REF.Article

INFLUENCE DE L'ETAT DE CHARGE SUR LA CONFIGURATION DES IMPURETES INTERSTITIELLES DANS LE SILICIUMMAKHMUDOV A SH; OKSENGENDLER BL; YUNUSOV MS et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 2; PP. 271-274; BIBL. 23 REF.Article

NEW NITROGEN-RELATED RECOMBINAISON IN GAPSNYDER PG; GUNDERSEN MA.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 4; PP. 2539-2542; BIBL. 11 REF.Article

EIGENSCHAFTEN EINIGER STOERSTELLENKOMPLEXE VON ZINK IN SILIZIUM = PROPRIETES DE QUELQUES COMPLEXES PERTURBANTS DU ZINC DANS LE SILICIUMLEMKE H.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 177-187; ABS. ENG; BIBL. 10 REF.Article

THE STUDY OF PHOTOLUMINESCENCE SPECTRA DEPTH PROFILES OF EPITAXIAL LAYERS GAP: ZN, OZYBORNY Z; PASTRNAK J.1981; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1981; VOL. 31; NO 4; PP. 433-440; BIBL. 19 REF.Article

SENSIBILITE DE PHOTODIODES S EN PRESENCE D'UN GRADIENT DE CONCENTRATION DES CENTRES PROFONDSADAMYAN ZN; ARUTYUNYAN VM; GASPARYAN FV et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1879-1882; BIBL. 19 REF.Article

PHOTOCONDUCTIVITE DU GERMANIUM IMPUR (GE:ZN:SB, GE:HG:SB) AU VOISINAGE DE LA TEMPERATURE AMBIANTEBURBAEV TM; KURBATOV VA; NASTAUSHEV YU V et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 10; PP. 1918-1922; BIBL. 7 REF.Article

EFFECT OF FLUX ON EMISSION CHARACTERISTICS OF CAS: ZR PHOSPHORS.CHAKRAVARTI AK; MOR SL; RANADE JD et al.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 9; PP. 608-611; BIBL. 12 REF.Article

STRUCTURE HYPERFINE DES SPECTRES DE RPE DES IONS ZN⁺ DANS LES VERRES DE BORATE DE LITHIUMBUKHARAEV AA; GALIMOV DG; TARZIMANOV KD et al.1982; FIZ. HIM. STEKLA; ISSN 0132-6651; SUN; DA. 1982; VOL. 8; NO 2; PP. 200-204; BIBL. 9 REF.Article

PHOTOLUMINESCENCE OF ZN DOPED INSE SINGLE CRYSTALSIKARI T; SHIGETOMI S; KOGA Y et al.SHIGETOMI S; 1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. K81-K83; BIBL. 5 REF.Article